Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire

被引：204

作者：

Chitnis, A ^{[1
]}

Chen, C ^{[1
]}

Adivarahan, V ^{[1
]}

Shatalov, M ^{[1
]}

Kuokstis, E ^{[1
]}

Mandavilli, V ^{[1
]}

Yang, J ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1738938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report blue-purple pn-junction light-emitting diodes (LEDs) with a-plane GaN-InGaN multiple quantum well active region. The LEDs were grown over r-plane sapphire substrates. Our study has shown the low pump intensity photoluminencence and electroluminescence to be dominated by emission from the band-tail states which then saturates rapidly giving rise to band-edge emission. (C) 2004 American Institute of Physics.

引用

页码：3663 / 3665

页数：3

共 11 条

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