Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire

被引：205

作者：

Chitnis, A ^{[1
]}

Chen, C ^{[1
]}

Adivarahan, V ^{[1
]}

Shatalov, M ^{[1
]}

Kuokstis, E ^{[1
]}

Mandavilli, V ^{[1
]}

Yang, J ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1738938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report blue-purple pn-junction light-emitting diodes (LEDs) with a-plane GaN-InGaN multiple quantum well active region. The LEDs were grown over r-plane sapphire substrates. Our study has shown the low pump intensity photoluminencence and electroluminescence to be dominated by emission from the band-tail states which then saturates rapidly giving rise to band-edge emission. (C) 2004 American Institute of Physics.

引用

页码：3663 / 3665

页数：3

共 11 条

[1] Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells [J].

Chen, CQ ;

Adivarahan, V ;

Yang, JW ;

Shatalov, M ;

Kuokstis, E ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB) :L1039-L1040

[2] GaN homoepitaxy on freestanding (1(1)over-bar00) oriented GaN substrates [J].

Chen, CQ ;

Gaevski, ME ;

Sun, WH ;

Kuokstis, E ;

Zhang, JP ;

Fareed, RSQ ;

Wang, HM ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Maruska, HP ;

Hill, DW ;

Chou, MMC ;

Chai, B .

APPLIED PHYSICS LETTERS, 2002, 81 (17) :3194-3196

[3] Exciton localization in InGaN quantum well devices [J].

Chichibu, S ;

Sota, T ;

Wada, K ;

Nakamura, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2204-2214

[4] Threading dislocation reduction via laterally overgrown nonpolar (11(2)over-bar0) a-plane GaN [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1201-1203

[5]

CRAVEN MD, MRS 2002 FALL M

[6] Defect reduction in (11(2)over-bar0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy [J].

Haskell, BA ;

Wu, F ;

Craven, MD ;

Matsuda, S ;

Fini, PT ;

Fujii, T ;

Fujito, K ;

DenBaars, SP ;

Speck, JS ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :644-646

[7] Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells [J].

Kuokstis, E ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Gaska, R ;

Shur, MS .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :977-979

[8] Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10(1)over-bar-2) sapphire substrates [J].

Ng, HM .

APPLIED PHYSICS LETTERS, 2002, 80 (23) :4369-4371

[9] Influence of microstructure on the carrier concentration of Mg-doped GaN films [J].

Romano, LT ;

Kneissl, M ;

Northrup, JE ;

Van de Walle, CG ;

Treat, DW .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2734-2736

[10] GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices [J].

Sun, WH ;

Yang, JW ;

Chen, CQ ;

Zhang, JP ;

Gaevski, ME ;

Kuokstis, E ;

Adivarahan, V ;

Wang, HM ;

Gong, Z ;

Su, M ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2003, 83 (13) :2599-2601

← 1 2 →