Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10(1)over-bar-2) sapphire substrates

被引：237

作者：

Ng, HM ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 23期

关键词：

D O I：

10.1063/1.1484543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN/Al0.15Ga0.85N multiple quantum wells (MQWs) have been grown by plasma-assisted molecular-beam epitaxy on R-plane (10 (1) over bar2) sapphire substrates. The orientation relationship was found to be (11 (2) over bar0) (Al)GaNparallel to(10 (1) over bar2) Al2O3, resulting in nonpolar GaN/AlGaN heterostructures. Room-temperature photoluminescence studies were performed to compare the optical properties of the MQWs grown on (0001) and (10 (1) over bar2) Al2O3 substrates. The peak transition energy, as a function of well width for the (11 (2) over bar0) MQWs, followed the trend for rectangular potential profiles indicating the absence of built-in electrostatic fields. In comparison, the peak transition energies for the (0001) MQWs showed a significant redshift due to the quantum-confined Stark effect, consistent with a built-in field value of 750 kV/cm. In addition, the photoluminescence intensity was 20 to 30 times higher for the (11 (2) over bar0) MQWs compared to the (0001) MQWs. (C) 2002 American Institute of Physics.

引用

页码：4369 / 4371

页数：3

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