Defect reduction in (11(2)over-bar0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

被引：165

作者：

Haskell, BA ^{[1
]}

Wu, F ^{[1
]}

Craven, MD ^{[1
]}

Matsuda, S ^{[1
]}

Fini, PT ^{[1
]}

Fujii, T ^{[1
]}

Fujito, K ^{[1
]}

DenBaars, SP ^{[1
]}

Speck, JS ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 04期

关键词：

D O I：

10.1063/1.1593817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports on the reduction in extended-defect densities in a-plane (11 (2) over bar0) GaN films achieved via lateral epitaxial overgrowth (LEO) by hydride vapor phase-epitaxy. A variety of dielectric mask patterns was used to produce 8-125-mum-thick, fully coalesced nonpolar GaN films. The nanometer-scale pit densities in the overgrown regions were less than 3x10(6) cm(-2) compared to similar to10(10) cm(-2) in the direct-growth a-plane GaN. Cathodoluminescence revealed a fourfold increase in luminous intensity in the overgrown material compared to the window material. X-ray rocking curves indicate the films were free of wing tilt within the sensitivity of the measurements. Whereas non-LEO a-plane GaN exhibits basal plane stacking fault and threading dislocation densities of 10(5) cm(-1) and 10(9) cm(-2), respectively, the overgrown LEO material was essentially free of extended defects. The basal plane stacking fault and threading dislocation densities in the wing regions were below the detection limits of similar to5x10(6) cm(-2) and 3x10(3) cm(-1), respectively. (C) 2003 American Institute of Physics.

引用

页码：644 / 646

页数：3

共 21 条

[1] Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition
Craven, MD
Waltereit, P
Wu, F
Speck, JS
DenBaars, SP
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (3A): : L235 - L238
[2] Threading dislocation reduction via laterally overgrown nonpolar (11(2)over-bar0) a-plane GaN
Craven, MD
Lim, SH
Wu, F
Speck, JS
DenBaars, SP
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1201 - 1203
[3] The toughest transistor yet
Eastman, LF
Mishra, UK
[J]. IEEE SPECTRUM, 2002, 39 (05) : 28 - +
[4] HASKELL BA, UNPUB
[5] Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
Marchand, H
Wu, XH
Ibbetson, JP
Fini, PT
Kozodoy, P
Keller, S
Speck, JS
DenBaars, SP
Mishra, UK
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (06) : 747 - 749
[6] Marchand H, 1998, MRS INTERNET J N S R, V3
[7] Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate
Motoki, K
Okahisa, T
Matsumoto, N
Matsushima, M
Kimura, H
Kasai, H
Takemoto, K
Uematsu, K
Hirano, T
Nakayama, M
Nakahata, S
Ueno, M
Hara, D
Kumagai, Y
Koukitu, A
Seki, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (2B): : L140 - L143
[8] Nakamura S., 2000, BLUE LASER DIODE
[9] Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
Nam, OH
Bremser, MD
Zheleva, TS
Davis, RF
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (18) : 2638 - 2640
[10] Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy
Nataf, G
Beaumont, B
Bouille, A
Haffouz, S
Vaille, M
Gibart, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 192 (1-2) : 73 - 78

← 1 2 3 →