Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition

被引：64

作者：

Craven, MD ^{[1
]}

Waltereit, P ^{[1
]}

Wu, F ^{[1
]}

Speck, JS ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 3A期

关键词：

nonpolar gallium nitride; metalorganic chemical vapor deposition; a-plane; quantum well; X-ray diffraction;

D O I：

10.1143/JJAP.42.L235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and optical properties of a 10-period (10.7nm GaN)/(10.1 nm Al0.25Ga0.75N) multiple quantum well structure grown on an a-plane GaN template layer were investigated. Despite high threading dislocation density (similar to3 x 10(10) cm(-2)) and surface undulations, abrupt quantum well interfaces produced well-defined satellite peaks out to the second order in a symmetric high-resolution X-ray diffraction scan. Thorough analysis of X-ray diffraction measurements (kinematical analysis and dynamic simulations) provided accurate measurements of the quantum well dimensions and barrier composition. Room temperature photoluminescence emission from the structure exhibits quantum confinement consistent with quantum wells free of polarization-induced electric fields.

引用

页码：L235 / L238

页数：4

共 14 条

[1] Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction [J].

Brandt, O ;

Waltereit, P ;

Ploog, KH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (07) :577-585

[2]

CRAVEN M, UNPUB

[3] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[4] Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells [J].

Grandjean, N ;

Damilano, B ;

Dalmasso, S ;

Leroux, M ;

Laügt, M ;

Massies, J .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3714-3720

[5] Giant electric fields in unstrained GaN single quantum wells [J].

Langer, R ;

Simon, J ;

Ortiz, V ;

Pelekanos, NT ;

Barski, A ;

André, R ;

Godlewski, M .

APPLIED PHYSICS LETTERS, 1999, 74 (25) :3827-3829

[6] Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells [J].

Lefebvre, P ;

Allégre, J ;

Gil, B ;

Mathieu, H ;

Grandjean, N ;

Leroux, M ;

Massies, J ;

Bigenwald, P .

PHYSICAL REVIEW B, 1999, 59 (23) :15363-15367

[7] Barrier-width dependence of group-III nitrides quantum-well transition energies [J].

Leroux, M ;

Grandjean, N ;

Massies, J ;

Gil, B ;

Lefebvre, P ;

Bigenwald, P .

PHYSICAL REVIEW B, 1999, 60 (03) :1496-1499

[8] Lattice parameters of gallium nitride [J].

Leszczynski, M ;

Teisseyre, H ;

Suski, T ;

Grzegory, I ;

Bockowski, M ;

Jun, J ;

Porowski, S ;

Pakula, K ;

Baranowski, JM ;

Foxon, CT ;

Cheng, TS .

APPLIED PHYSICS LETTERS, 1996, 69 (01) :73-75

[9] Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10(1)over-bar-2) sapphire substrates [J].

Ng, HM .

APPLIED PHYSICS LETTERS, 2002, 80 (23) :4369-4371

[10] Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment [J].

Park, SH ;

Chuang, SL .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :1981-1983

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