Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate

被引：290

作者：

Motoki, K

Okahisa, T

Matsumoto, N

Matsushima, M

Kimura, H

Kasai, H

Takemoto, K

Uematsu, K

Hirano, T

Nakayama, M

Nakahata, S

Ueno, M

Hara, D

Kumagai, Y

Koukitu, A

Seki, H

机构：

[1] Sumitomo Elect Ind Ltd, Itami Res Labs, Itami, Hyogo 6640016, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Div, Itami, Hyogo 6640016, Japan

[3] Tokyo Univ Agr & Technol, Fac Technol, Dept Appl Chem, Tokyo 1848588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 2B期

关键词：

GaN substrate; freestanding GaN; GaAs substrate; HVPE; X-ray diffraction; photoluminescence; dislocation; etch pit; Hall measurement;

D O I：

10.1143/JJAP.40.L140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A freestanding GaN substrate over 2 inches in size was successfully prepared for the first time by hydride vapor phase epitaxy (HVPE) using GaAs as a starting substrate. In the experiment, a GaAs (111)A substrate with a SiO2 mask pattern on its surface was used. A thick GaN layer was grown on the CaAs substrate at 1030 degreesC through the openings in the SiO2 mask. By dissolving the GaAs substrate in aqua regia, a freestanding GaN substrate about 500 mum thick was obtained. The full-width at half maximum (FWHM) in the omega -mode X-ray diffraction (XRD) profile of GaN (0002) plane was 106 arcsec. The dislocation density of the GaN substrate obtained was determined to be as low as 2 x 10(5) cm(-2) by plan-view transmission electron microscopy (TEM). Hall measurements revealed the n-type conductivity of the GaN substrate with typical carrier concentration and carrier mobility of 5 x 10(18) cm(-3) and 170 cm(2), V-1, s(-1), respectively.

引用

页码：L140 / L143

页数：4

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