Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact

被引：103

作者：

Kuramoto, M

Sasaoka, C

Hisanaga, Y

Kimura, A

Yamaguchi, AA

Sunakawa, H

Kuroda, N

Nido, M

Usui, A

Mizuta, M

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 2B期

关键词：

semiconductor laser diodes; GaN; InGaN multi-quantum-well; n-GaN substrate; backside n-contact; low dislocation density;

D O I：

10.1143/JJAP.38.L184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave operation at room-temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on low-dislocation-density n-GaN substrates with a backside n-contact. The current, current density and voltage at the lasing threshold were 144 mA, 10.9 kA/cm(2) and 10.5 V, respectively, for a 3 mu m wide ridge-geometry diode with high-reflection dielectric coated mirrors. Single-transverse-mode emission was observed in the far-field pattern of the LDs and the beam full width at half power in the parallel and perpendicular directions was 6 degrees and 25 degrees, respectively.

引用

页码：L184 / L186

页数：3

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