Growth and properties of InGaN nanoscale islands on GaN

被引：34

作者：

Keller, S ^{[1
]}

Keller, BP

Minsky, MS

Bowers, JE

Mishra, UK

DenBaars, SP

Seifert, W

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Lund, S-22100 Lund, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

MOCVD; InGaN; morphology; photoluminescence; atomic force microscopy;

D O I：

10.1016/S0022-0248(98)00150-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Strong photoluminescence and radiative recombination lifetimes longer than 1 ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands. The flat islands, with a width at their base in the order of 200 nm and a height in the order of 1-2 nm, grow in a spiral mode around dislocations with partial or pure screw character after a passivation of the GaN surface by a preflow of disilane. Their surface density is comparable to the dislocation density of the GaN layer in the order of 10(8)-10(9) cm(-2). (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：29 / 32

页数：4

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