Influence of microstructure on the carrier concentration of Mg-doped GaN films

被引：75

作者：

Romano, LT ^{[1
]}

Kneissl, M ^{[1
]}

Northrup, JE ^{[1
]}

Van de Walle, CG ^{[1
]}

Treat, DW ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Elect Mat Lab, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 17期

关键词：

D O I：

10.1063/1.1413222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature Hall effect measurements of (0001) Mg-doped GaN films grown on sapphire substrates by metalorganic chemical vapor deposition show a reduction in hole concentration for Mg concentrations greater than 10(20) cm(-3). A combination of secondary ion mass spectrometry and transmission electron microscopy indicates a steadily increasing Mg incorporation during growth and the formation of inversion domains at these high concentrations. We discuss mechanisms that could give rise to a reduction of the hole concentration at high Mg doping levels. (C) 2001 American Institute of Physics.

引用

页码：2734 / 2736

页数：3

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