Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging

被引:1291
作者
Qazilbash, M. M. [1 ]
Brehm, M.
Chae, Byung-Gyu
Ho, P. -C.
Andreev, G. O.
Kim, Bong-Jun
Yun, Sun Jin
Balatsky, A. V.
Maple, M. B.
Keilmann, F.
Kim, Hyun-Tak
Basov, D. N.
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Max Planck Inst Biochem, Abt Mol Strukturbiol, D-82152 Munich, Germany
[3] Ctr Nanosci, D-82152 Munich, Germany
[4] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305350, South Korea
[5] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
[6] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
关键词
D O I
10.1126/science.1150124
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator- to- metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide in which the metallic state can be induced by increasing temperature. Scanning near- field infrared microscopy allows us to directly image nanoscale metallic puddles that appear at the onset of the insulator- to- metal transition. In combination with far- field infrared spectroscopy, the data reveal the Mott transition with divergent quasi- particle mass in the metallic puddles. The experimental approach used sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.
引用
收藏
页码:1750 / 1753
页数:4
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