Fluorine segregation and incorporation during solid-phase epitaxy of Si

被引：30

作者：

Mirabella, S

Impellizzeri, G

Bruno, E

Romano, L

Grimaldi, MG

Priolo, F

Napolitani, E

Carnera, A

机构：

[1] Univ Catania, INFM, MATIS, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] Univ Padua, INFM, MATIS, I-35131 Padua, Italy

[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期

关键词：

D O I：

10.1063/1.1886907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the F incorporation into Si during solid-phase epitaxy (SPE) at 580 degrees C and with the presence of B and/or As, clarifying the F incorporation mechanism into Si. A strong segregation of F at the moving amorphous-crystalline interface has been characterized, leading to a SPE rate retardation and to a significant loss of F atoms through the surface. In B- or As-doped samples, an enhanced, local F incorporation is observed, whereas in the case of B and As co-implantation (leading to compensating dopant effect), a much lower F incorporation is achieved at the dopant peak. The F enhanced incorporation with the presence of B or As is shown to be a kinetic effect related to the SPE rate modification by doping, whereas the hypothesis of a F-B or F-As chemical bonding is refused. These results shed new light on the application of F in the fabrication of ultrashallow junctions in future generation devices. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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