Correlations between pressure and bandwidth effects in metal-insulator transitions in manganites

被引：31

作者：

Cui, CW ^{[1
]}

Tyson, TA ^{[1
]}

机构：

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1646212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of pressure on the metal-insulator transition in manganites with a broad range of bandwidths is investigated. A critical pressure is found at which the metal-insulator transition temperature, T-MI, reaches a maximum value in every sample studied. The origin of this universal pressure and the relation between the pressure effect and the bandwidth on the metal-insulator transition are discussed. (C) 2004 American Institute of Physics.

引用

页码：942 / 944

页数：3