High-Performance Ambipolar Transistors and Inverters from an Ultralow Bandgap Polymer

被引：154

作者：

Fan, Jian ^{[1
,2
]}

Yuen, Jonathan D. ^{[2
]}

Wang, Mingfeng ^{[2
]}

Seifter, Jason ^{[2
]}

Seo, Jung-Hwa ^{[2
,3
]}

Mohebbi, Ali Reza ^{[2
]}

Zakhidov, Dante ^{[2
]}

Heeger, Alan ^{[1
,2
]}

Wudl, Fred ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Energy Efficient Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[3] Dong A Univ, Dept Mat Phys, Pusan 604714, South Korea

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 16期

基金：

美国国家科学基金会;

关键词：

charge transport; polymeric materials; conjugated polymers; thin films; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; CONJUGATED POLYMERS; ORGANIC TRANSISTORS; CHARGE-TRANSPORT; N-CHANNEL; MOBILITY; ELECTRON; ACCEPTOR; DONOR;

D O I：

10.1002/adma.201103836

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High mobility ambipolor organic thin-film transistors based on an ultralow bandgap polymer are presented together with their morphological and optical properties. Hole and electron mobilities of this polymer are of 1.0 cm 2 V -1 s -1 and 0.7 cm 2 V -1 s -1, respectively. The inverter based on two identical ambipolar transistors exhibits a gain around 35. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2186 / 2190

页数：5

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