High Mobility Ambipolar Charge Transport in Polyselenophene Conjugated Polymers

被引：160

作者：

Chen, Zhuoying ^{[1
]}

Lemke, Henrik ^{[2
,3
]}

Albert-Seifried, Sebastian ^{[1
]}

Caironi, Mario ^{[1
]}

Nielsen, Martin Meedom ^{[2
,3
]}

Heeney, Martin ^{[4
]}

Zhang, Weimin ^{[4
]}

McCulloch, Iain ^{[4
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Univ Copenhagen, Dept Chem, Ctr Mol Movies, DK-2100 Copenhagen, Denmark

[3] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark

[4] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; SEMICONDUCTORS; SELENOPHENE;

D O I：

10.1002/adma.200903711

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm(2)V(-1)s(-1) are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.

引用

页码：2371 / 2375

页数：5

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