Floating body DRAM characteristics of Silicon-On-ONO (SOONO) devices for system-on-chip (SoC) applications

被引：12

作者：

Oh, Chang Woo ^{[1
]}

Kim, Na Young ^{[1
]}

Song, Ho Ju ^{[1
]}

Hong, Sung In ^{[1
]}

Kim, Sung Hwan ^{[1
]}

Choi, Yong Lack ^{[1
]}

Bae, Hyun Jun ^{[1
]}

Choi, Dong Uk ^{[1
]}

Lee, Yong Seok ^{[2
]}

Kim, Dong-Won ^{[1
]}

Park, Donggun ^{[1
]}

Ryu, Byung-Il ^{[1
]}

机构：

[1] Samsung Elect Co, R&D Ctr, Device Res Team, San 24, Yongin 449711, Kyungki Do, South Korea

[2] Samsung Elect Co, R&D Ctr, MTT, Yongin 449711, Kyungki Do, South Korea

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We completed the demonstration of three key functions of SOONO devices by demonstrating the DRAM characteristics of FD and PD SOONO devices successfully, together with the previously reported logic transistor and flash memory characteristics. Floating body SOONO DRAM cells implemented on electrically thin buried insulator shows the large sensing margins more than 5 mu A in FD device with long data retention and nondestructive read even at the W/L of 60/55nm which is the smallest 1T DRAM ever reported.

引用

页码：168 / +

页数：2

共 8 条

[1]

FAZAN PC, 2002, P SOC PHOTO-OPT INS, P489

[2]

KIM SH, 2006, IEDM, P897

[3] A capacitorless double gate DRAM technology for sub-100-nm embedded and stand-alone memory applications [J].

Kuo, C ;

King, TJ ;

Hu, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2408-2416

[4]

OH CW, 2006, VLSI, P58

[5]

OH CW, 2006, IEDM, P967

[6]

OHSAWA T, 2002, J SSC, P1510

[7] A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories [J].

Ranica, R ;

Villaret, A ;

Fenouillet-Beranger, C ;

Malinge, P ;

Mazoyer, P ;

Masson, P ;

Delille, D ;

Charbuillet, C ;

Candelier, P ;

Skotnicki, T .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :277-280

[8]

YOSHIDA E, 2003, IEDM, P913

← 1 →