Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films

被引：29

作者：

Joyce, BA ^{[1
]}

Vvedensky, DD ^{[1
]}

Avery, AR ^{[1
]}

Belk, JG ^{[1
]}

Dobbs, HT ^{[1
]}

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

基金：

英国工程与自然科学研究理事会;

关键词：

MBE; nucleation; strain relaxation; distribution functions; orientation effects;

D O I：

10.1016/S0169-4332(98)00084-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molecular beam epitaxy (MBE) is an ideal vehicle for the study of initial growth processes in thin film growth, both for the degree of control available in the amount of material deposited and for its compatibility with in situ diagnostic probes. In this paper we discuss nucleation mechanisms involved in the growth of GaAs on GaAs and InAs on GaAs from elemental sources, in each case on the three low index substrate orientations, i.e. (001), (110) and (111)A. We have used a combination of reflection high energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM) to measure both dynamic changes and nucleation events over the range 0.05 to 5.0 monolayers (MLs). These data have been analysed using scaling theory, dynamic Monte Carlo simulation and self-consistent rate equations. Perhaps the most important and striking feature of the results is the uniqueness of behaviour of the (001) orientation in both material systems. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：357 / 366

页数：10

共 30 条

[1] Mechanism for disorder on GaAs(001)-(2x4) surfaces [J].