Resolving the non-uniqueness of the activation energy associated with TDDB for SiO2 thin films

The mixing of field-induced and current-induced degradation mechanisms can result in TDDB data showing a strong non-Arrhenius temperature dependence. Generally, at higher fields and lower temperatures, the current-induced mechanism dominates and a small activation energy is observed. At lower fields and higher temperatures, the field-induced degradation mechanism tends to dominate and a strong temperature dependence is produced. The mixing of the current-induced and field-induced mechanisms can result in an activation energy associated with TDDB which is not unique but strongly dependent on test conditions and oxide thickness. The mixing is validated over various voltage, field, thickness and temperature regimes.