Comparison of E and 1/E TDDB models for SiO2 under long-term/low-field test conditions

被引：104

作者：

McPherson, J ^{[1
]}

Reddy, V ^{[1
]}

Banerjee, K ^{[1
]}

Le, H ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-field three-year TDDB study was undertaken to clearly understand which TDDB model, E or 1/E, describes the observed time-to-failure data better. The results are unambiguous and strongly suggest that the physics of failure is described much better by the E-model. This has important design-limit implications for thin gate oxides relative to the maximum electric field which can be allowed for reliable operation.

引用

页码：171 / 174

页数：4

共 16 条

[1]

ANOLICK ES, 1979, IEEE P INT REL PHYS, P8

[2]

Berman A., 1981, P INT REL PHYS S IRP, P204

[3]

CROOK DL, 1979, IEEE P INT REL PHYS, P1

[4] Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric breakdown [J].

Kimura, M .

1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL, 1997, :190-200

[5] MODELING AND CHARACTERIZATION OF GATE OXIDE RELIABILITY [J].

LEE, JC ;

CHEN, IC ;

HU, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2268-2278

[6]

McPherson J. W., 1985, 23rd Annual Proceedings Reliability Physics 1985 (Cat. No. 85CH2113-9), P1, DOI 10.1109/IRPS.1985.362066

[7] Disturbed bonding states in SiO2 thin-films and their impact on time-dependent dielectric breakdown [J].

McPherson, JW ;

Mogul, HC .

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, :47-56

[8] Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin films [J].

McPherson, JW ;

Mogul, HC .

APPLIED PHYSICS LETTERS, 1997, 71 (25) :3721-3723

[9] ACCELERATION FACTORS FOR THIN OXIDE BREAKDOWN [J].

MCPHERSON, JW ;

BAGLEE, DA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1903-1908

[10] Field-enhanced Si-Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics [J].

McPherson, JW ;

Reddy, VK ;

Mogul, HC .

APPLIED PHYSICS LETTERS, 1997, 71 (08) :1101-1103

← 1 2 →