Comparison of E and 1/E TDDB models for SiO2 under long-term/low-field test conditions

被引：104

作者：

McPherson, J ^{[1
]}

Reddy, V ^{[1
]}

Banerjee, K ^{[1
]}

Le, H ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-field three-year TDDB study was undertaken to clearly understand which TDDB model, E or 1/E, describes the observed time-to-failure data better. The results are unambiguous and strongly suggest that the physics of failure is described much better by the E-model. This has important design-limit implications for thin gate oxides relative to the maximum electric field which can be allowed for reliable operation.

引用

页码：171 / 174

页数：4

共 16 条

[11] Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films [J].