RELIABILITY OF THIN SIO2

被引：92

作者：

SCHUEGRAF, KF

HU, CM

机构：

[1] Dept. of Electr. Eng. and Comput. Sci., California Univ., Berkeley, CA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

引用

页码：989 / 1004

页数：16

共 76 条

[1]

Abe H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P372

[2]

BERMAN A, 1981, P INT RELIABILITY PH, P204

[3] QUANTUM YIELD OF ELECTRON-IMPACT IONIZATION IN SILICON [J].