THE EFFECT OF CHANNEL HOT-CARRIER STRESSING ON GATE-OXIDE INTEGRITY IN MOSFETS

被引：34

作者：

CHEN, IC ^{[1
]}

CHOI, JY ^{[1
]}

CHAN, TY ^{[1
]}

HU, CM ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

Data Storage; Semiconductor--Storage Devices - Electric Breakdown - Semiconductor Materials--Charge Carriers;

D O I：

10.1109/16.8800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The correlation between channel hot-carrier stressing and gate-oxide integrity is studied. It is found that channel hot carriers have no detectable effect on gate-oxide integrity even when other parameters (e.g., ΔVT and ΔID) have become intolerably degraded. In the extreme cases of stressing at VG VT with measurable hole injection current, however, the oxide charge to breakdown decreases linearly with the amount of hole fluence injected during the channel hot-hole stressing. This may limit the endurance of a nonvolatile memory using hot holes for erasing. This can also explain the gate-to-drain breakdown of a device biased in the snap-back region, since snap-back at low gate voltage is favorable for hole injection. Snap-back-induced oxide breakdown could be an ESD (electrostatic discharge) failure mechanism.

引用

页码：2253 / 2258

页数：6

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