OBSERVATION OF HOT-HOLE INJECTION IN NMOS TRANSISTORS USING A MODIFIED FLOATING-GATE TECHNIQUE

被引：53

作者：

SAKS, NS

HEREMANS, PL

VANDENHOVE, L

MAES, HE

DEKEERSMAECKER, RF

DECLERCK, GJ

机构：

[1] CATHOLIC UNIV LEUVEN, INTERUNIV MICROELECTR CTR, RES & DEV LAB, B-3030 HEVERLE, BELGIUM

[2] CATHOLIC UNIV LEUVEN, ESAT LAB, B-3030 HEVERLE, BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1529 / 1534

页数：6

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