Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films

被引:74
作者
Majumder, SB [1 ]
Roy, B
Katiyar, RS
Krupanidhi, SB
机构
[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[2] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
关键词
D O I
10.1063/1.1391416
中图分类号
O59 [应用物理学];
学科分类号
摘要
The results of the studies on the effect of rare earth Nd doping on the phase formation behavior and electrical properties of sol-gel derived Pb-1.05(Zr0.53Ti0.47)O-3 (PZT) thin films are presented. The perovskite phase is obtained up to 5 at. % doping and beyond that pyrochlore phase was found to coexist with the perovskite phase in all the films. The transition temperature of undoped lead zirconate titanate (PZT) film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxor-type behavior and a diffuse phase transition, similar to that observed in relaxor materials. The introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO(3) lattice, which causes the observed dielectric relaxation. Efforts were made to isolate the irreversible component contributions in low field dielectric and high field polarization switching behavior. (C) 2001 American Institute of Physics.
引用
收藏
页码:2975 / 2984
页数:10
相关论文
共 28 条
[1]  
Bolten D, 2000, MATER RES SOC SYMP P, V596, P301
[2]   Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films [J].
Bolten, D ;
Lohse, O ;
Grossmann, M ;
Waser, R .
FERROELECTRICS, 1999, 221 (1-4) :251-257
[3]   Reversible and irreversible processes in donor-doped Pb(Zr,Ti)O3 [J].
Bolten, D ;
Böttger, U ;
Schneller, T ;
Grossmann, M ;
Lohse, O ;
Waser, R .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3830-3832
[4]   Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film [J].
Cho, CR ;
Lee, WJ ;
Yu, BG ;
Kim, BW .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2700-2711
[5]   Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process [J].
Cho, SM ;
Jeon, DY .
THIN SOLID FILMS, 1999, 338 (1-2) :149-154
[6]   Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics [J].
Damjanovic, D .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (09) :1267-1324
[7]   Perovskite thin films for high-frequency capacitor applications [J].
Dimos, D ;
Mueller, CH .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :397-419
[8]   Evidence for domain-type dynamics in the ergodic phase of the PbMg1/3Nb2/3O3 relaxor ferroelectric [J].
Glazounov, AE ;
Tagantsev, AK ;
Bell, AJ .
PHYSICAL REVIEW B, 1996, 53 (17) :11281-11284
[9]   A random field theory based model for ferroelectric relaxors [J].
Glinchuk, MD ;
Farhi, R .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (37) :6985-6996
[10]   DOPANT DISTRIBUTION BETWEEN A AND B SITES IN PZT CERAMICS OF TYPE-ABO3 [J].
GONNARD, P ;
TROCCAZ, M .
JOURNAL OF SOLID STATE CHEMISTRY, 1978, 23 (3-4) :321-326