Ex situ ellipsometric investigation of nanocolumns inclination angle of obliquely evaporated silicon thin films -: art. no. 153103

被引：34

作者：

Beydaghyan, G ^{[1
]}

Buzea, C ^{[1
]}

Cui, Y ^{[1
]}

Elliott, C ^{[1
]}

Robbie, K ^{[1
]}

机构：

[1] Queens Univ, Dept Phys, Kingston, ON K7L 3N6, Canada

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 15期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2084329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose an application of spectroscopic ellipsometry pertinent to the characterization of nanostructure inclination of oblique thin films. This technique is employed ex situ in the measurement of silicon thin films fabricated at oblique incidence and modeled as aggregate microstructures formed from amorphous silicon, silicon oxide, and void in the effective medium model. The technique may also be utilized in situ as a powerful probe for the characterization of oblique thin films during their fabrication and processing. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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