Measurement of roughness of two interfaces of a dielectric film by scattering ellipsometry

被引:28
作者
Germer, TA [1 ]
机构
[1] NIST, Opt Technol Div, Gaithersburg, MD 20899 USA
关键词
D O I
10.1103/PhysRevLett.85.349
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The polarization of light scattered by oxide films thermally grown on photolithographically generated microrough silicon surfaces was measured as functions of scattering angle, Using the predictions of first-order vector perturbation theory for scattering from interfacial roughness to interpret the results, the roughness of each interface and the correlation function between the two interfaces can be determined. The results show the spatial frequency dependence of the SiO2/Si interface smoothening.
引用
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页码:349 / 352
页数:4
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