On the origin of IQE-'droop' in InGaN LEDs

被引：130

作者：

Laubsch, Ansgar ^{[1
]}

Sabathil, Matthias ^{[1
]}

Bergbauer, Werner ^{[1
]}

Strassburg, Martin ^{[1
]}

Lugauer, Hans ^{[1
]}

Peter, Matthias ^{[1
]}

Lutgen, Stephan ^{[1
]}

Linder, Norbert ^{[1
]}

Streubel, Klaus ^{[1
]}

Hader, Joerg ^{[2
]}

Moloney, Jerome V. ^{[2
]}

Pasenow, Bernhard ^{[3
]}

Koch, Stephan W. ^{[3
]}

机构：

[1] OSRAM Optosemicond GmbH, Leibnizstr 4, D-93055 Regensburg, Germany

[2] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[3] Univ Marburg, Dept Phys & Math Sci Ctr, Marburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

D O I：

10.1002/pssc.200880950

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We identify a quantum well internal high density Auger-like loss process as the origin of the so called 'droop' of internal quantum efficiency (IQE) in InGaN based light emitters. The IQE of such a device peaks at small current densities and then monotonously decreases towards higher currents. The origin of this 'droop' has been widely discussed recently and many possible mechanisms have been proposed for explaining the effect. We compare temperature and carrier density dependent electroluminescence and photoluminescence measurements of a green emitting single quantum-well (SQW) LED over a wide parameter range. The carrier-density as well as temperature dependence of efficiency is identical in both measurements, indicating that the decrease is due to a high density quantum-well internal loss process. The data can be accurately modeled assuming an Auger-like loss process with C = 3.5 x 10(-31) cm(6)s(-1). We suggest phonon- or defect-assisted Auger recombination as the origin of this loss-channel. The high current performance can be improved if a thick InGaN SQW or a multi quantum-well (MQW) is used. This is in very good agreement with theoretical simulations. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S913 / S916

页数：4

共 16 条

[1] Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes
David, Aurelien
Grundmann, Michael J.
Kaeding, John F.
Gardner, Nathan F.
Mihopoulos, Theodoros G.
Krames, Michael R.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (05)
[2] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2
Gardner, N. F.
Mueller, G. O.
Shen, Y. C.
Chen, G.
Watanabe, S.
Gotz, W.
Krames, M. R.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (24)
[3] On the importance of radiative and Auger losses in GaN-based quantum wells
Hader, J.
Moloney, J. V.
Pasenow, B.
Koch, S. W.
Sabathil, M.
Linder, N.
Lutgen, S.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (26)
[4] HAHN B, 2007, P WOCSDICE 2007, P3
[5] Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
Hangleiter, A
Hitzel, F
Netzel, C
Fuhrmann, D
Rossow, U
Ade, G
Hinze, P
[J]. PHYSICAL REVIEW LETTERS, 2005, 95 (12)
[6] Härle V, 2003, PROC SPIE, V4996, P133, DOI 10.1117/12.476591
[7] Origin of efficiency droop in GaN-based light-emitting diodes
Kim, Min-Ho
Schubert, Martin F.
Dai, Qi
Kim, Jong Kyu
Schubert, E. Fred
Piprek, Joachim
Park, Yongjo
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (18)
[8] Measurement of the internal quantum efficiency of InGaN quantum wells
Laubsch, A.
Sabathil, M.
Bruederl, G.
Wagner, J.
Strassburg, M.
Baur, E.
Braun, H.
Schwarz, U. T.
Lell, A.
Lutgen, S.
Linder, N.
Oberschmid, R.
Hahn, B.
[J]. LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS XI, 2007, 6486
[9] LAUBSCH A, PHYS STATUS IN PRESS
[10] Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
Li, Y.-L.
Huang, R.
Lai, Y.-H.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (18)

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