On the importance of radiative and Auger losses in GaN-based quantum wells

被引:233
作者
Hader, J. [1 ,2 ]
Moloney, J. V. [1 ,2 ]
Pasenow, B. [3 ,4 ]
Koch, S. W. [3 ,4 ]
Sabathil, M. [5 ]
Linder, N. [5 ]
Lutgen, S. [5 ]
机构
[1] Nonlinear Control Strategies Inc, Tucson, AZ 85705 USA
[2] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[4] Univ Marburg, Ctr Math Sci, D-35032 Marburg, Germany
[5] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
关键词
Augers - Gallium nitride - III-V semiconductors;
D O I
10.1063/1.2953543
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Auger losses are found to be negligible in contrast to recent speculations on their importance for the experimentally observed efficiency droop. Good agreement with experimentally measured threshold losses is demonstrated. The results show no significant dependence on details of the well alloy profile. (c) 2008 American Institute of Physics.
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页数:3
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