Supression of carrier recombination in semiconductor lasers by phase-space filling

被引：70

作者：

Hader, J ^{[1
]}

Moloney, JV

Koch, SW

机构：

[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[3] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 20期

关键词：

D O I：

10.1063/1.2132524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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