Recent progress of AlInGaN laser diodes

被引：38

作者：

Nagahama, SI ^{[1
]}

Sugimoto, Y ^{[1
]}

Kozaki, T ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Corp, Optoelect Prod Div, LD Dev Dept, Tokushima 7748601, Japan

来源：

Novel In-Plane Semiconductor Lasers IV | 2005年 / 5738卷

关键词：

AlInGaN; laser diode; ultraviolet; cyan;

D O I：

10.1117/12.597098

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Nine years has passed since the initial development of GaN-based violet laser diodes (LDs) in the 405 nm wavelength ran,,e in 1995. Starting with next-eneration hich-density optical discs, the commercial use of violet LDs has been adopted in many new fields, such as biomedical, reprographic, and exposure fields. Recently, lasing wavelength has broadened to cover from the ultraviolet (UV) to blue-green regions, which enabled other new applications. In this paper, the current status of GaN-based LDs from the UV to blue-green regions is reported.

引用

页码：57 / 62

页数：6

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