GaN-based laser diodes emitting from ultraviolet to blue-green.

被引：20

作者：

Nagahama, S ^{[1
]}

Sano, M ^{[1
]}

Yanamoto, T ^{[1
]}

Morita, D ^{[1
]}

Miki, O ^{[1
]}

Sakamoto, K ^{[1
]}

Yamamoto, M ^{[1
]}

Matsuyama, Y ^{[1
]}

Kawata, Y ^{[1
]}

Murayama, T ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS II | 2003年 / 4995卷

关键词：

AlInGaN; laser diode; high power; ultraviolet; blue-green;

D O I：

10.1117/12.475759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based laser diodes (LDs), which emit from ultraviolet (UV) to blue-green, are reviewed. For fabricating the UV LDs, we used the AlInGaN active layer instead of InGaN one. We demonstrated the UV LDs with a lasing wavelength 368 nm under continuous-wave (cw) operation. Moreover, we fabricated the blue-green LDs whose lasing wavelength was 480 nm. It was investigated that the relationship between the threshold current density and the lasing wavelength. From our experiments, we successfully expanded the range of GaN-based LDs lasing wavelength, from ultraviolet (368 nm) to blue-green (480nm). Regarding high power 405 nm-LDs, we could demonstrate the cw operated LD array devices with an output power of 1W by decreasing the thermal resistance of the LD chips.

引用

页码：108 / 116

页数：9

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