Characteristics of ultraviolet laser diodes composed of quaternary AlxInyGa(1-x-y)N

被引：59

作者：

Nagahama, S ^{[1
]}

Yanamoto, T ^{[1
]}

Sano, M ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 8A期

关键词：

AlInGaN; quantum well; ultraviolet laser; lateral overgrowth;

D O I：

10.1143/JJAP.40.L788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet (UV) laser diodes (LDs) whose active layers were composed of quaternary AlxInyGa(1-x-y)N were grown on epitaxially laterally overgrown GaN substrates by a metalorganic chemical vapor deposition method. We investigated the Al and In mole fractions dependence of LD characteristics in the UV region. The emission wavelength of the LDs whose active layers consisted of Al0.03In0.02Ga0.95N single quantum well (SQW) was 366.4 nm under pulsed current injection at room temperature. The lasing wavelength was the shortest ever reported for III-V nitride-based LDs. The Al0.03In0.03Ga0.94N SQW UV LDs were demonstrated under 25 degreesC continuous-wave (cw) operation. The threshold current density and voltage of these LDs were 3.5 kA/cm(2) and 4.8 V, respectively. The estimated lifetime was approximately 500 h under 25 degreesC ew operation at an output power of 2 mW.

引用

页码：L788 / L791

页数：4

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