Characteristics of InGaN laser diodes in the pure blue region

被引：54

作者：

Nagahama, S ^{[1
]}

Yanamoto, T ^{[1
]}

Sano, M ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1399011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well-structure laser diodes (LDs), whose emission wavelengths are in the pure blue region, were grown on epitaxially laterally overgrown GaN on a free-standing GaN substrate by the metaorganic chemical-vapor deposition method. The wavelength dependence of the InGaN LD characteristics was investigated. These results indicated that there is a strong relationship between the threshold current density and the emission wavelength of LDs. LDs with an emission wavelength of 460 nm were demonstrated. The threshold current density and voltage of these LDs were 3.3 kA/cm(2) and 4.6 V, respectively. The estimated lifetime was approximately 3000 h under 50 degreesC continuous-wave operation at an output power of 5 mW. (C) 2001 American Institute of Physics.

引用

页码：1948 / 1950

页数：3

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