Mediation of room temperature ferromagnetism in Co-doped SnO2 nanocrystalline films by structural defects

被引:33
作者
Liu, X. F. [1 ]
Yu, R. H. [1 ]
机构
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2801375
中图分类号
O59 [应用物理学];
学科分类号
摘要
Co-doped SnO2 nanocrystalline films have been fabricated by magnetron sputtering to investigate the effects of structural defects on mediating ferromagnetism in this system. X-ray photoelectron spectroscopy analysis reveals that Co element is incorporated into SnO2 lattice and is in 2+ oxidation state in all samples. High-resolution transmission electron microscopy observation indicates that along the film growth direction, Sn1-xCoxO2 films change from amorphous structure to columnar grain except for the film deposited at room temperature. With the decrease of film thickness, deposition rate, and deposition temperature, a relative proportion of structural defects in films increases, resulting in an enhancement of the saturated magnetic moment of Sn1-xCoxO2 film. Bound magnetic polaron mechanism is adopted to explain the mediation effect of structural defects on ferromagnetism in this system. (C) 2007 American Institute of Physics.
引用
收藏
页数:5
相关论文
共 21 条
[1]   Spintronics [J].
Awschalom, DD ;
Flatté, ME ;
Samarth, N .
SCIENTIFIC AMERICAN, 2002, 286 (06) :66-73
[2]   Activation of high-Tc ferromagnetism in Co2+:TiO2 and Cr3+:TiO2 nanorods and nanocrystals by grain boundary defects [J].
Bryan, JD ;
Santangelo, SA ;
Keveren, SC ;
Gamelin, DR .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (44) :15568-15574
[3]   Strong room-temperature ferromagnetism in Co2+-doped TiO2 made from colloidal nanocrystals [J].
Bryan, JD ;
Heald, SM ;
Chambers, SA ;
Gamelin, DR .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (37) :11640-11647
[4]   Donor impurity band exchange in dilute ferromagnetic oxides [J].
Coey, JMD ;
Venkatesan, M ;
Fitzgerald, CB .
NATURE MATERIALS, 2005, 4 (02) :173-179
[5]   Ferromagnetism in Fe-doped SnO2 thin films [J].
Coey, JMD ;
Douvalis, AP ;
Fitzgerald, CB ;
Venkatesan, M .
APPLIED PHYSICS LETTERS, 2004, 84 (08) :1332-1334
[6]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[7]   Structural, electronic, and magnetic properties of a ferromagnetic semiconductor:: Co-doped TiO2 rutile -: art. no. 125203 [J].
Geng, WT ;
Kim, KS .
PHYSICAL REVIEW B, 2003, 68 (12)
[8]   Defect-induced ferromagnetism in co-doped ZnO [J].
Khare, Neeraj ;
Kappers, Menno J. ;
Wei, Ming ;
Blamire, Mark G. ;
MacManus-Driscoll, Judith L. .
ADVANCED MATERIALS, 2006, 18 (11) :1449-+
[9]   Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices [J].
Kim, H ;
Gilmore, CM ;
Piqué, A ;
Horwitz, JS ;
Mattoussi, H ;
Murata, H ;
Kafafi, ZH ;
Chrisey, DB .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6451-6461
[10]   Role of oxygen vacancies in tuning magnetic properties of Co-doped SnO2 insulating films [J].
Liu, X. F. ;
Sun, Y. ;
Yu, R. H. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)