Defect-induced ferromagnetism in co-doped ZnO

被引：218

作者：

Khare, Neeraj

Kappers, Menno J.

Wei, Ming

Blamire, Mark G.

MacManus-Driscoll, Judith L.

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Indian Inst Technol Delhi, Phys Dept, New Delhi 110016, India

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 11期

关键词：

D O I：

10.1002/adma.200502200

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel soft-solution technique is used to grow epitaxial Zn0.98CO0.02O films on the c-plane (0001) of a single-crystal sapphire substrate. Annealing the films in precisely controlled atmospheres shows that the ferromagnetism is not linked to the carrier-concentration density. Undertaking cyclic annealing studies in the presence or absence of Zn vapor (see figure) shows that Zn interstitials but not oxygen vacancies are the critical defects for inducing ferromagnetism.

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页码：1449 / +

页数：5

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