Design of ATCD three color detector for color detection in transient regime

被引：2

作者：

Irrera, F ^{[1
]}

Palma, F ^{[1
]}

Lemmi, F ^{[1
]}

Diotallevi, M ^{[1
]}

机构：

[1] Dept Elect Engn, I-00184 Rome, Italy

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present the characterization of an ATCD three color detector used in the charge integration regime, as necessary in large area matrices. In particular, we present linearity measurements of mesa insulated devices and characterization of the self-bias process occurring in the transient read-out of stacked structures. A new system architecture is introduced which considers interlaced row charge restore, and separates the charge restore process from the charge sampling process in order to reach self-bias within a short frame time.

引用

页码：309 / 314

页数：6

共 5 条

[1] AMORPHOUS SI/SIC 3-COLOR DETECTOR WITH ADJUSTABLE THRESHOLD [J].