The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine interfaces

被引：133

作者：

Lee, Hyunbok ^{[3
]}

Cho, Sang Wan ^{[3
]}

Han, Kyul ^{[3
]}

Jeon, Pyung Eun ^{[3
]}

Whang, Chung-Nam ^{[3
]}

Jeong, Kwangho ^{[3
]}

Cho, Kwanghee ^{[2
]}

Yi, Yeonjin ^{[1
]}

机构：

[1] Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea

[2] Hynix Semicond Inc, Div Res & Dev, Ami Ri Bubal Eub Icheon 467701, Gyeunggi Do, South Korea

[3] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.2965120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the interfacial electronic structures of indium tin oxide ( ITO )/ molybdenum trioxide (MoO3 ) / N, N '-bis(1-naphthyl)-N,N-(diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) using in situ ultraviolet and x- ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light- emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance. (c) 2008 American Institute of Physics.

引用

页数：3

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