Effect of second phase on the electrical properties of SrBi2Ta2O9 (SBT) thin films deposited at 550°C by PEMOCVD

被引：5

作者：

Seong, NJ ^{[1
]}

Yoon, SG ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

SrBi2Ta2O9; second phase effect; PEMOCVD;

D O I：

10.1080/10584589808202064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bi-layered ferroelectric SrBi2Ta2O9 (SBT) films were successfully prepared on Pt/SiO2/Si and Pt/Ti/SiO2/Si substrates at 550 degrees C by plasma-enhanced metalorganic chemical vapor deposition. A Bi2Ti4O11 (BTO) phase was formed at the interface between SET films and the Pt/Ti/SiO2/Si during the deposition of SET films at 550 degrees C. The leakage current density of the SET films was decreased by the formation of BTO phase. The leakage current densities of SET films deposited on Pt/SiO2/Si and Pt/Ti/SiO2/Si substrates were about 5.0 x 10(-7) and 5.0 x 10(-8) A/cm(2) at an applied field of 300 kV/cm, respectively. The SET films were controlled by Schottky emission. The Schottky barrier heights of SET films deposited on Pt/SiO2/Si and Pt/Ti/SiO2/Si were about 0.8 and 1.2 eV, respectively.

引用

页码：207 / 215

页数：9

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