Deep levels and compensation in γ-irradiated CdZnTe

被引：55

作者：

Cavallini, A

Fraboni, B

Dusi, W

Zanarini, M

Siffert, P

机构：

[1] Univ Bologna, INFM, I-40127 Bologna, Italy

[2] Univ Bologna, Dipartimento Fis, I-40127 Bologna, Italy

[3] CNR, Ist TESRE, I-40129 Bologna, Italy

[4] CNRS, Lab PHASE, F-67037 Strasbourg, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1324980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of detector-grade Cd0.9Zn0.1Te in a radiation-hostile environment has been investigated by studying the effects on the material defective states induced by gamma irradiation. The detector performance is strongly affected by the presence of charge-trapping centers which may also intervene in the material compensation properties. We have investigated by photoinduced current transient spectroscopy analyses the evolution with increasing irradiation dose of the deep levels both present in the as-grown material and induced by the ionizing radiation. A significant correlation between the material resistivity and some deep levels behavior has been observed. We have compared this trend to the results obtained from gamma -irradiated CdTe:Cl to better understand the role deep traps play in the compensation process of II-VI materials. (C) 2000 American Institute of Physics. [S0003-6951(00)00146-7].

引用

页码：3212 / 3214

页数：3

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