Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures

被引：226

作者：

Smith, AR

Feenstra, RM ^{[1
]}

Greve, DW

Shin, MS

Skowronski, M

Neugebauer, J

Northrup, JE

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[3] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[4] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[5] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.590156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reconstructions of GaN(0001) and (<000(1)over bar>) surfaces are studied by scanning tunneling microscopy and spectroscopy, by electron diffraction, by Auger electron spectroscopy, and using first-principles theory. Attention is focused on Ga-rich reconstructions for each surface, which are found to have a metallic character involving significant overlap between Ga valence electrons. The electron counting rule is thus violated for these surfaces, but they nonetheless form minimum energy structures. (C) 1998 American Vacuum Society.

引用

页码：2242 / 2249

页数：8