High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant

被引:131
作者
Brandt, O
Yang, H
Kostial, H
Ploog, KH
机构
[1] Paul-Drude-Inst. F. F., D-10117 Berlin
[2] Natl. Res. Ctr. Optoelectron. T., Institute of Semiconductors, Chinese Academy of Science, Beijing 100083
关键词
D O I
10.1063/1.117685
中图分类号
O59 [应用物理学];
学科分类号
摘要
P-type room-temperature conductivities as high as 50/Omega cm are achieved in cubic GaN layers by the concept of reactive codoping. We use Be as the acceptor species and O as the reactive donor to render isolated Coulomb scatterers into dipole scatterers. This concept allows us to achieve high hole mobilities and thus p-type conductivities. (C) 1996 American Institute of Physics.
引用
收藏
页码:2707 / 2709
页数:3
相关论文
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