Diode like behaviour of an ion irradiated polyaniline film

被引：57

作者：

Srivastava, MP

Mohanty, SR

Annapoorni, S

Rawat, RS

机构：

[1] Dept. of Physics and Astrophysics, University of Delhi

来源：

PHYSICS LETTERS A | 1996年 / 215卷 / 1-2期

关键词：

dense plasma focus; polyaniline;

D O I：

10.1016/0375-9601(96)00198-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

P-N junction diode formation has been achieved for the first time in a single polyaniline film, cation doped chemically on one side and anion doped by irradiation of ions from dense plasma focus on the other side. The diode behaviour is confirmed by I-V characteristics. The results of ESCA, XRD and SEM for chemical composition, structure and surface morphology, respectively, are also reported for these films.

引用

收藏

页码：63 / 68

页数：6

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