Wet chemical etching of NiFe, NiFeCo and NiMnSb for magnetic device fabrication

被引：6

作者：

Cao, XA ^{[1
]}

Caballero, JA

Jung, KB

Lee, JW

Onishi, S

Childress, JA

Pearton, SJ

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Plasma Therm, St Petersburg, FL 33716 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(98)00134-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film NiMnSb is found to be wet chemically etched in a range of solutions, including HNO3, H2SO4:H2O2, FeCl3 and HF, with activation energies in the range 10-23 kCal mol(-1), i.e. a reaction-limited regime. The degree of sidewall undercut is a function of solution type. Both NiFe and NiFeCo can be etched in H2SO4 and HNO3, with reaction-limited characteristics, while HCl at 25 degrees C is completely selective for NiFe over NiFeCo, even for 7% Co alloys. The degree of sidewall undercut on NiFe is also a strong function of solution type. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1705 / 1710

页数：6

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