High rate dry etching of Ni0.8Fe0.2 and NiFeCo

被引：44

作者：

Jung, KB ^{[1
]}

Lambers, ES ^{[1
]}

Childress, JR ^{[1
]}

Pearton, SJ ^{[1
]}

Jenson, M ^{[1
]}

Hurst, AT ^{[1
]}

机构：

[1] HONEYWELL INC,SOLID STATE ELECT CTR,PLYMOUTH,MN 55441

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.119925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Cl-2/Ar plasma chemistry operated under electron cyclotron resonance (ECR) conditions is found to produce etch rates for NiFe and NiFeCo of greater than or equal to 3000 Angstrom min(-1) at less than or equal to 80 degrees C. The etch rates are proportional to ion density and average ion energy over a fairly wide range of conditions. Under the same conditions, fluorine or methane/hydrogen plasma chemistries produce rates :tower than the Ar sputter rate. The high ion current under ECR conditions appears to balance NiClx, FeClx, and CoClx etch product formation with efficient ion-assisted desorption, and prevents formation of the usual chlorinated selvedge layer that requires elevated ion etching conditions. Post Cl-2-etch removal of surface residues is performed with an in situ H-2 plasma exposure. (C) 1997 American Institute of Physics.

引用

页码：1255 / 1257

页数：3

共 19 条

[1] THE KINETICS OF TUNGSTEN ETCHING BY ATOMIC AND MOLECULAR CHLORINE [J].