PLASMA-ETCHING OF ALUMINUM - A COMPARISON OF CHLORINATED ETCHANTS

被引:42
作者
DANNER, DA [1 ]
DALVIE, M [1 ]
HESS, DW [1 ]
机构
[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720
关键词
D O I
10.1149/1.2100529
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:669 / 673
页数:5
相关论文
共 43 条
[1]   ELECTRON ATTACHMENT TO HALOGENATED ALIPHATIC HYDROCARBONS [J].
BLAUNSTE.RP ;
CHRISTOP.LG .
JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (04) :1526-&
[2]  
BROYDO S, 1983, SOLID STATE TECHNOL, V25, P159
[3]  
BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64
[4]   HIGH-RATE ANISOTROPIC ALUMINUM ETCHING [J].
BRUCE, RH ;
MALAFSKY, GP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1369-1373
[5]  
BRUCE RH, 1981, ELECTROCHEMICAL SOC, P243
[6]  
Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856
[7]   REACTION OF ATOMIC AND MOLECULAR CHLORINE WITH ALUMINUM [J].
DANNER, DA ;
HESS, DW .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :940-947
[8]   THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J].
DANNER, DA ;
HESS, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :151-155
[9]   ALUMINUM SPUTTER ETCHING USING SICL4 [J].
DEGENKOLB, EO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1150-1151
[10]  
DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161