HIGH-RATE ANISOTROPIC ALUMINUM ETCHING

被引：41

作者：

BRUCE, RH ^{[1
]}

MALAFSKY, GP ^{[1
]}

机构：

[1] PERKIN ELMER CORP,NORWALK,CT 06856

来源：

关键词：

D O I：

10.1149/1.2119953

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1369 / 1373

页数：5

共 14 条

[1] BERSIN RL, 1978, SOLID STATE TECHNOL, V21, P117
[2] BRUCE RH, 1981, PLASMA PROCESSING, P243
[3] CONRAD RA, UNPUB
[4] EGERTON EJ, 1982, SOLID STATE TECHNOL, V25, P84
[5] Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]
[6] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON
MOGAB, CJ
LEVINSTEIN, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730
[7] NAKAMURA M, 1981, P S PLASMA ETCHING D, P225
[8] ODA M, 1980, JPN J APPL PHYS, V19, P1405
[9] POULSEN RB, 1976, P IEDM M WASHINGTON
[10] PREFERENTIAL LATERAL CHEMICAL ETCHING IN REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS
SCHAIBLE, PM
SCHWARTZ, GC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 377 - 380