THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS

[1] TEMPERATURE-MEASUREMENTS OF GLASS SUBSTRATES DURING PLASMA-ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 335 - 338

[2] BRUCE RH, 1981, ELECTROCHEMICAL SOC, P243

[3] DANNER DA, UNPUB J APPL PHYS

[4] STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5273 - 5276

[5] DONNELLY VM, 1982, J VAC SCI TECHNOL, V217, P81

[6] EGERTON EJ, 1982, SOLID STATE TECHNOL, V24, P84

[7] TRUE SURFACE-TEMPERATURE OF A SILICON WAFER AND THE RELATED ETCH RATE IN A CF4 PLASMA [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 701 - 703

[8] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[9] FLAMM DL, 1982, PLASMA CHEM PLASMA P, V2, P1

[10] NON-CONTACT SURFACE-TEMPERATURE MEASUREMENT DURING REACTIVE-ION ETCHING USING FLUORESCENT POLYMER-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 749 - 751

[1] TEMPERATURE-MEASUREMENTS OF GLASS SUBSTRATES DURING PLASMA-ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 335 - 338

[2] BRUCE RH, 1981, ELECTROCHEMICAL SOC, P243

[3] DANNER DA, UNPUB J APPL PHYS

[4] STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5273 - 5276

[5] DONNELLY VM, 1982, J VAC SCI TECHNOL, V217, P81

[6] EGERTON EJ, 1982, SOLID STATE TECHNOL, V24, P84

[7] TRUE SURFACE-TEMPERATURE OF A SILICON WAFER AND THE RELATED ETCH RATE IN A CF4 PLASMA [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 701 - 703

[8] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639

[9] FLAMM DL, 1982, PLASMA CHEM PLASMA P, V2, P1

[10] NON-CONTACT SURFACE-TEMPERATURE MEASUREMENT DURING REACTIVE-ION ETCHING USING FLUORESCENT POLYMER-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 749 - 751