MOLYBDENUM ETCHING WITH CHLORINE ATOMS AND MOLECULAR CHLORINE PLASMAS

被引：35

作者：

FISCHL, DS ^{[1
]}

HESS, DW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1577 / 1580

页数：4

共 27 条

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IGNATIEV, A .

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[2]

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STECKL, AJ .

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[4]

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[5]

CHOW TP, 1983, ELECTROCHEMICAL S PV, V8310, P362

[6]

CHOW TP, 1981, EXTENDED ABSTRACT EL, V811, P738

[7] REACTION OF ATOMIC AND MOLECULAR CHLORINE WITH ALUMINUM [J].

DANNER, DA ;

HESS, DW .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :940-947

[8] PLASMA-ENHANCED ETCHING OF TUNGSTEN AND TUNGSTEN SILICIDE IN CHLORINE-CONTAINING DISCHARGES [J].

FISCHL, DS ;

HESS, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) :2265-2269

[9]

FISCHL DS, 1988, IN PRESS J ELECT AUG

[10]

GOROWITZ B, 1968, VLSI ELECTRONICS MIC, V8, P298

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