MOLYBDENUM ETCHING WITH CHLORINE ATOMS AND MOLECULAR CHLORINE PLASMAS

被引：35

作者：

FISCHL, DS ^{[1
]}

HESS, DW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1577 / 1580

页数：4

共 27 条

[11]

GUTMAN V, 1967, HALOGEN CHEM, V3

[12] DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION [J].

HIRATA, K ;

OZAKI, Y ;

ODA, M ;

KIMIZUKA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1323-1331

[13] MOLYBDENUM TAPER DRY ETCHING [J].

HOSOYA, T ;

OHFUJI, S ;

SHIBATA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) :1135-1140

[14]

Killeffer D. H., 1952, MOLYBDENUM COMPOUNDS

[15] CONTINUOUS WAVE LASER ASSISTED CHEMICAL MATERIAL REMOVAL FROM MO, W, AND SI AT FAINT RED HOT TEMPERATURES (700-800-DEGREES-C) [J].

KOREN, G .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :1012-1014

[16] PROFILE CONTROLLED ETCHING FOR MO/WSIX DOUBLE-LAYERS [J].

KURIYAMA, Y ;

SUZUKI, M ;

HIRAYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (02) :L96-L98

[17] MOLYBDENUM ETCHING USING CCL4/O2 MIXTURE GAS [J].

KUROGI, Y ;

KAMIMURA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :168-172

[18]

MAEDA K, 1975, DENKI KAGAKU, V43, P22

[19] ELECTRICAL-RESISTIVITY OF VACUUM-DEPOSITED MOLYBDENUM FILMS [J].

OIKAWA, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :1117-1122

[20]

OIKAWA H, 1985, ELECTROCHEMICAL SOC, V855, P131

← 1 2 3 →