MOLYBDENUM TAPER DRY ETCHING

被引：10

作者：

HOSOYA, T

OHFUJI, S

SHIBATA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 05期

关键词：

D O I：

10.1149/1.2115766

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1135 / 1140

页数：6

共 9 条

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[9] A 1-MU-M MO-POLY 64-KBIT MOS RAM [J].

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