PROFILE CONTROL WITH DC BIAS IN PLASMA-ETCHING

[1] NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1825 - 1826

[2] BRUCE RH, 1981, PLASMA PROCESSING, P243

[3] BRUCE RH, UNPUB J APPL PHYS

[4] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[5] Melliar-Smith C. M., 1978, THIN FILM PROCESSES

[6] POGGE HB, 1978, J ELECTROCHEM SOC, V125, pC470

[7] SMITH DL, 1981, EL SOC EXT ABSTR, V258, P625

[8] YAO WW, 1981, EL SOC EXT ABSTR, V268, P652

[1] NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1825 - 1826

[2] BRUCE RH, 1981, PLASMA PROCESSING, P243

[3] BRUCE RH, UNPUB J APPL PHYS

[4] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[5] Melliar-Smith C. M., 1978, THIN FILM PROCESSES

[6] POGGE HB, 1978, J ELECTROCHEM SOC, V125, pC470

[7] SMITH DL, 1981, EL SOC EXT ABSTR, V258, P625

[8] YAO WW, 1981, EL SOC EXT ABSTR, V268, P652