MOLYBDENUM ETCHING USING CCL4/O2 MIXTURE GAS

[1] DECOMPOSITION AND PRODUCT FORMATION IN CF4-O2 PLASMA-ETCHING SILICON IN THE AFTERGLOW [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 480 - 485

[2] ENDO N, 1980, IEEE T ELECTRON DEV, V27, P1346, DOI 10.1109/T-ED.1980.20038

[3] MAEDA K, 1975, DENKI KAGAKU, V43, P22

[4] MATSUO S, 1979, 1ST P S DRYPR, P13

[5] ODA M, 1980, 2ND P S DRY PROC TOK, P87

[6] REACTIVE ION ETCHING OF SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 410 - 413

[7] SI AND SIO2 ETCHING CHARACTERISTICS USING REACTIVE ION ETCHING WITH CF4-CL2 GAS-MIXTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : 1579 - 1580

[1] DECOMPOSITION AND PRODUCT FORMATION IN CF4-O2 PLASMA-ETCHING SILICON IN THE AFTERGLOW [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 480 - 485

[2] ENDO N, 1980, IEEE T ELECTRON DEV, V27, P1346, DOI 10.1109/T-ED.1980.20038

[3] MAEDA K, 1975, DENKI KAGAKU, V43, P22

[4] MATSUO S, 1979, 1ST P S DRYPR, P13

[5] ODA M, 1980, 2ND P S DRY PROC TOK, P87

[6] REACTIVE ION ETCHING OF SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 410 - 413

[7] SI AND SIO2 ETCHING CHARACTERISTICS USING REACTIVE ION ETCHING WITH CF4-CL2 GAS-MIXTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : 1579 - 1580